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參數(shù)資料
| 型號： | 2SA2029M3 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | PNP Silicon General Purpose Amplifier Transistor |
| 中文描述： | 進步黨硅通用晶體管放大器 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 58K |
| 代理商： | 2SA2029M3 |
Semiconductor Components Industries, LLC, 2004
November, 2004 Rev. 1
1
Publication Order Number:
2SA2029M3/D
2SA2029M3T5G
PNP Silicon General
Purpose Amplifier Transistor
This PNP transistor is designed for general purpose amplifier
applications. This device is housed in the SOT723 package which is
designed for low power surface mount applications, where board
space is at a premium.
Reduces Board Space
High h
FE
, 210460 (Typical)
Low V
CE(sat)
, < 0.5 V
ESD Performance: Human Body Model;
Machine Model;
Available in 4 mm, 8000 Unit Tape & Reel
This is a PbFree Device
2000 V,
200 V
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Value
Unit
CollectorBase Voltage
V
(BR)CBO
60
Vdc
CollectorEmitter Voltage
V
(BR)CEO
50
Vdc
EmitterBase Voltage
V
(BR)EBO
6.0
Vdc
Collector Current Continuous
I
C
100
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation (Note 1)
P
D
265
mW
Junction Temperature
T
J
150
°
C
Storage Temperature Range
T
stg
55 ~ +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted on a FR4 glass epoxy printed circuit board using the
minimum recommended footprint.
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
2SA2029M3T5G
SOT723
(PbFree)
8000/Tape & Reel
SOT723
CASE 631AA
MARKING
DIAGRAM
1
2
3
F9 M
F9 = Specific Device Code
M = Date Code
PNP GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
COLLECTOR
3
1
BASE
2
EMITTER
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參數(shù)描述 |
|---|---|
| 2SA2029M3T5G | 功能描述:兩極晶體管 - BJT 100mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA2029Q | 制造商:ROHM 制造商全稱:Rohm 功能描述:General Purpose Transistor |
| 2SA2029R | 制造商:ROHM 制造商全稱:Rohm 功能描述:General Purpose Transistor |
| 2SA2029S | 制造商:ROHM 制造商全稱:Rohm 功能描述:General Purpose Transistor |
| 2SA2029T2L/QR | 制造商:ROHM Semiconductor 功能描述: |
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