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參數(shù)資料
| 型號： | 2SA2018TL |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | EMT3, SC-75A, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 139K |
| 代理商： | 2SA2018TL |
2SA2018 / 2SA2030 / 2SA2119K
Transistors
Rev.C
1/2
Low frequency transistor
2SA2018 / 2SA2030 / 2SA2119K
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
Applications
For switching, for muting.
Features
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) ≤ 250mA
At IC =
200mA / IB = 10mA
Dimensions
(Unit : mm)
Absolute maximum ratings
(Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
PC
Tstg
Limits
15
12
150
55 to +150
Unit
V
mW
°C
Collector-base voltage
Collector-emitter voltage
VEBO
6V
Emitter-base voltage
Collector power dissipation
Storage temperature
IC
ICP
500
1
mA
A
Collector current
Tj
150
Junction temperature
SMT3
200
VMT3
EMT3
Single pulse, Pw=1ms
Electrical characteristics
(Ta=25
°C)
Parameter
Collector-base breakdown voltage
Symbol
Min.
Typ. Max.
Unit
Conditions
BVCBO
15
VIC
= 10A
IC
= 1mA
IE
= 10A
VCB
= 15V
IC
= 200mA / IB= 10mA
VCE
= 2V / IC= 10mA
VCE
= 2V, IE=10mA, fT=100MHz
VCB
= 10V, IE=0A, f=1MHz
Collector-emitter breakdown voltage
BVCEO
12
V
Emitter-base breakdown voltage
BVEBO
6
V
Collector cutoff current
ICBO
100 nA
VEB
= 6V
Emitter cutoff current
IEBO
100 nA
Collector-emitter saturation voltage
VCE (sat)
100 250 mV
DC current transfer ratio
hFE
270
680
fT
260
MHz
Output capacitance
Cob
6.5
pF
(1) Emitter
(2) Base
(3) Collector
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
Each lead has same dimensions
Abbreviated symbol : BW
2SA2018
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
Each lead has same dimensions
Abbreviated symbol : BW
2SA2119K
(1) Base
(2) Emitter
(3) Collector
ROHM : VMT3
Each lead has same dimensions
Abbreviated symbol : BW
2SA2030
(2)
(1)
2.8
1.6
0.4
(3)
2.9
1.9
0.95
0.8
0.15
0.3Min.
1.1
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