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參數(shù)資料
| 型號： | 2SA2018 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Low frequency transistor |
| 中文描述： | 低頻晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 80K |
| 代理商： | 2SA2018 |
2SA2018
/
2SA2030
/
2SA2119K
Transistors
z
Packaging specifications and h
FE
Rev.A 2/2
Package name
Code
Basic ordering unit (pieces)
Taping
TL
3000
2SA2119K
2SA2018
2SA2030
T146
3000
T2L
8000
Type
h
FE
z
Electrical characteristic curves
500
C
C
1
2
5
10
20
50
100
200
1000
0
0.5
1.0
1.5
BASE TO EMITTER VOLTAGE : V
BE
(V)
V
CE
=
2V
Fig.1 Grounded Emitter Propagation
Characteristics
Ta
=
40
°
C
Ta
=
25
°
C
Ta
=
125
°
C
1
2
5
10
20
50
100
200
500
1000
1
2
5
10
20
50 100 200
500 1000
COLLECTOR CURRENT : I
C
(mA)
D
F
V
CE
=
2V
Fig.2 DC Current Gain vs.
Collector Current
Ta
=
40
°
C
Ta
=
25
°
C
Ta
=
125
°
C
1
2
5
10
20
50
100
200
500
1000
1
2
5
10
20
50 100 200
500 1000
COLLECTOR CURRENT : I
C
(mA)
I
C
/ I
B
=
20
Ta
=
40
°
C
Ta
=
25
°
C
Ta
=
125
°
C
C
V
C
Fig.3 Collector-Emitter Saturation
Voltage vs.
Collector Current
(
Ι
)
1
2
5
10
20
50
100
200
500
1000
1
2
5
10
20
50 100 200
500 1000
COLLECTOR CURRENT : I
C
(mA)
Ta
=
25
°
C
I
C
/ I
B
=
50
I
C
/ I
B
=
20
I
C
/ I
B
=
10
Fig.4 Collector-Emitter Saturation
Voltage vs.
Collector Current
(
ΙΙ
)
C
V
C
10
20
50
100
200
500
1000
2000
5000
10000
1
2
5
10
20
50 100 200
500 1000
COLLECTOR CURRENT : I
C
(mA)
I
C
/ I
B
=
20
Ta
=
125
°
C
Ta
=
25
°
C
Ta
=
40
°
C
B
B
Fig.5 Base-Emitter Saturation
Voltage vs.Collecter Current
1
2
5
10
20
50
100
200
500
1000
1
2
5
10
20
50 100 200
500 1000
EMITTER CURRENT : I
C
(mA)
T
T
V
CE
=
2V
Ta
=
25
°
C
Fig.6 Gain Bandwidth Product vs.
Emitter Current
1
0.1 0.2
2
5
10
20
50
100
200
500
1000
0.5
1
2
5
10
20
50 100
EMITTER TO BASE VOLTAGE : V
EB
(V)
I
E
=
0A
f
=
1MHz
Ta
=
25
°
C
Fig.7 Collector Output Capacitance vs.
Collector-Base Voltage
Emitter Input Capacitance vs.
Emitter-Base Voltage
Cib
Cob
E
C
C
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA2018_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Low frequency transistor |
| 2SA2018F | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:PNP Silicon General Purpose Transistor |
| 2SA2018H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Transistors |
| 2SA2018TL | 功能描述:兩極晶體管 - BJT PNP 12V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA202 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SA203 |
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