參數(shù)資料
型號: 2SA1986-R
元件分類: 功率晶體管
英文描述: 15 A, 230 V, PNP, Si, POWER TRANSISTOR
文件頁數(shù): 1/4頁
文件大小: 130K
代理商: 2SA1986-R
2SA1986
2006-11-09
1
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1986
Power Amplifier Applications
High breakdown voltage: VCEO = 230 V (min)
Complementary to 2SC5358
Recommended for 80-W high-fidelity audio frequency amplifier
output stage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
230
V
Collector-emitter voltage
VCEO
230
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
15
A
Base current
IB
1.5
A
Collector power dissipation
(Tc = 25°C)
PC
150
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
相關(guān)PDF資料
PDF描述
2SA1987-R 15 A, 230 V, PNP, Si, POWER TRANSISTOR
2SA1988 7 A, 200 V, PNP, Si, POWER TRANSISTOR
2SA1988-A 7 A, 200 V, PNP, Si, POWER TRANSISTOR
2SA2012 5 A, 30 V, PNP, Si, POWER TRANSISTOR
2SA2012 5 A, 30 V, PNP, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA1986-R(Q) 制造商:Toshiba America Electronic Components 功能描述:
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2SA1987-R(Q) 制造商:Toshiba America Electronic Components 功能描述:
2SA1KBOX 制造商:Metallics 功能描述:Exact Equal/ 1-5 Days
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