- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371480 > 2SA1982S (PANASONIC CORP) TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 50MA I(C) | SC-71 PDF資料下載
參數(shù)資料
| 型號： | 2SA1982S |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 50MA I(C) | SC-71 |
| 中文描述： | 50 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MT-2-A1, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 2SA1982S |
1
Transistor
2SA1982
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
Complementary to 2SC5346
I
Features
G
Satisfactory foward current transfer ratio h
FE
collector current I
C
characteristics.
G
High collector to emitter voltage V
CEO
.
G
Small collector output capacitance C
ob
.
G
Makes up a complementary pair with 2SC2631, which is opti-
mum for the pre-driver stage of a 20 to 40W output amplifier.
I
Absolute Maximum Ratings
(Ta=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
–150
–150
–5
–100
–50
1
150
–55~+150
Unit
V
V
V
mA
mA
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Noise voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
NV
f
T
C
ob
Conditions
V
CB
= –100V, I
E
= 0
I
C
= –0.1mA, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CE
= –5V, I
C
= –10mA
I
C
= –30mA, I
B
= –3mA
V
CE
= –10V, I
C
= –1mA, G
V
= 80dB
R
g
= 100k
, Function = FLAT
V
CB
= –10V, I
E
= 10mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–150
–5
130
typ
150
200
max
–1
330
–1
300
5
Unit
μ
A
V
V
V
mV
MHz
pF
Unit: mm
1:Emitter
2:Collector
3:Base
MT2 Type Package
2.5
±
0.1
4
±
0
1
±
0
2.5
±
0.5
2.5
±
0.5
2
±
0
6.9
±
0.1
1.05
±
0.05
(1.45)
4.0
0.7
0.8
0
0
0
1
1
0.65 max.
0.45
+0.1
0
+
–
3
2
1
*1
h
FE
Rank classification
Rank
R
S
h
FE
130 ~ 220
185 ~ 330
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
1.2
±
0.1
0.65
0.45
0.1
+
–
Note:In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1986 | TRANSISTOR (POWER AMPLIFIER APPLICATIONS) |
| 2SA1987 | TRANSISTOR (POWER AMPLIFIER APPLICATIONS) |
| 2SA1989 | For Low Frequency Amplify Application Silicon PNP Epitaxial Type Uitra Super Nini |
| 2SA2004 | Silicon PNP epitaxial planer type |
| 2SA2009 | Silicon PNP epitaxial planer type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1986-O(Q) | 制造商:Toshiba 功能描述:PNP -230V -15A 80 to 160 TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:Transistor 制造商:Toshiba 功能描述:Trans GP BJT PNP 230V 15A 3-Pin(3+Tab) TO-3PN |
| 2SA1986-R(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1987-O(Q) | 制造商:Toshiba 功能描述:PNP -230V -15A 80 to 160 TO3P(L) Bulk 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP 230V 15A TO-3PL 制造商:Toshiba America Electronic Components 功能描述:Transistor 制造商:Toshiba 功能描述:Trans GP BJT PNP 230V 15A 3-Pin(3+Tab) TO-3PL |
| 2SA1987-R(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1KBOX | 制造商:Metallics 功能描述:Exact Equal/ 1-5 Days |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。