- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369070 > 2SA1797L-X-AB3-R (友順科技股份有限公司) POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SA1797L-X-AB3-R |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | POWER TRANSISTOR |
| 中文描述： | 功率晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 51K |
| 代理商： | 2SA1797L-X-AB3-R |
2SA1797
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 2
QW-R208-029,B
ABS OLUT E MAX IMUM RAT INGS
(Ta=25°C)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
RATINGS
-50
-50
-6
0.8
0.5
1.9
-2
-5
150
-55 ~ +150
UNIT
V
V
V
W
W
A
A
°
C
°
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SOT-223
SOT-89
TO-252
DC
PULSE(Note 1)
Collector Power Dissipation
P
C
Collector Current
I
C
Junction Temperature
Storage Temperature
Note: 1. Single pulse, P
W
=10ms
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
T
J
T
STG
ELECT RICAL CHARACT ERIS T ICS
(Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
f
T
Cob
TEST CONDITIONS
I
C
= -50
μ
A
I
C
= -1mA
I
E
= -50
μ
A
V
CB
= -50V
V
EB
= -5V
I
C
/I
B
= -1A/-50mA (Note)
V
CE
= -2V, I
C
=-0.5A (Note)
V
CE
= -2V, I
E
=0.5A, f=100MHz
V
CB
= -10V, I
E
=0A, f=1MHz
MIN
-50
-50
-6
120
TYP MAX UNIT
-0.1
-0.1
-0.15 -0.35
400
200
36
Collector-base Breakdown Voltage
Collector-emitter Breakdown Voltage
Emitter-base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-emitter Saturation Voltage
DC Current Gain
Transition Frequency
Output Capacitance
Note: Measured using pulse current.
V
V
V
μ
A
μ
A
V
MHz
pF
CLAS S IFICAT ION OF h
FE
RANK
RANGE
A
B
120-240
200-400
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1797L-X-TN3-R | POWER TRANSISTOR |
| 2SA1797-X-AA3-R | POWER TRANSISTOR |
| 2SA1797-X-AB3-R | POWER TRANSISTOR |
| 2SA1797-X-TN3-R | POWER TRANSISTOR |
| 2SA1797-X-TN3-T | POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1797T100P | 功能描述:兩極晶體管 - BJT PNP 50V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1797T100Q | 功能描述:兩極晶體管 - BJT PNP 50V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1804 | 制造商:Distributed By MCM 功能描述:-120V -8A 70W Bce Toshiba Transistor 2-16F1A |
| 2SA1804-O | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1804-R(F) | 制造商:Toshiba America Electronic Components 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。