參數(shù)資料
型號(hào): 2SA1797-X-AB3-R
廠商: 友順科技股份有限公司
英文描述: POWER TRANSISTOR
中文描述: 功率晶體管
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 51K
代理商: 2SA1797-X-AB3-R
2SA1797
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 2
QW-R208-029,B
ABS OLUT E MAX IMUM RAT INGS
(Ta=25°C)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
RATINGS
-50
-50
-6
0.8
0.5
1.9
-2
-5
150
-55 ~ +150
UNIT
V
V
V
W
W
A
A
°
C
°
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SOT-223
SOT-89
TO-252
DC
PULSE(Note 1)
Collector Power Dissipation
P
C
Collector Current
I
C
Junction Temperature
Storage Temperature
Note: 1. Single pulse, P
W
=10ms
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
T
J
T
STG
ELECT RICAL CHARACT ERIS T ICS
(Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
f
T
Cob
TEST CONDITIONS
I
C
= -50
μ
A
I
C
= -1mA
I
E
= -50
μ
A
V
CB
= -50V
V
EB
= -5V
I
C
/I
B
= -1A/-50mA (Note)
V
CE
= -2V, I
C
=-0.5A (Note)
V
CE
= -2V, I
E
=0.5A, f=100MHz
V
CB
= -10V, I
E
=0A, f=1MHz
MIN
-50
-50
-6
120
TYP MAX UNIT
-0.1
-0.1
-0.15 -0.35
400
200
36
Collector-base Breakdown Voltage
Collector-emitter Breakdown Voltage
Emitter-base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-emitter Saturation Voltage
DC Current Gain
Transition Frequency
Output Capacitance
Note: Measured using pulse current.
V
V
V
μ
A
μ
A
V
MHz
pF
CLAS S IFICAT ION OF h
FE
RANK
RANGE
A
B
120-240
200-400
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
相關(guān)PDF資料
PDF描述
2SA1797-X-TN3-R POWER TRANSISTOR
2SA1797-X-TN3-T POWER TRANSISTOR
2SA1819 TRANSISTORS TO 92L TO-92LS MRT
2SA935 TO-92L Plastic-Encapsulated Transistors
2SA1584 TRANSISTORS TO 92L TO-92LS MRT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA1804 制造商:Distributed By MCM 功能描述:-120V -8A 70W Bce Toshiba Transistor 2-16F1A
2SA1804-O 制造商:Toshiba America Electronic Components 功能描述:
2SA1804-R(F) 制造商:Toshiba America Electronic Components 功能描述:
2SA1805-O(F) 制造商:Toshiba 功能描述:PNP Bulk
2SA1806GRL 功能描述:TRANS PNP 15VCEO 50MA SSMINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR