參數(shù)資料
型號: 2SA1774EBS
元件分類: 小信號晶體管
英文描述: 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: EMT3F, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 76K
代理商: 2SA1774EBS
2SA1774EB
Transistors
2/3
Electrical characteristics (Ta=25
°C)
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Output capacitance
Parameter
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
50
60
6
82
140
4.0
100
0.5
560
5.0
VIC=
1mA
IC=
50A
IE=
50A
VCB=
60V
VEB=
6V
IC/IB=
50mA/5mA
VCE=
6V, IC=1mA
VCE=
12V, IE=2mA, f=100MHz
VCE=
12V, IE=0A, f=1MHz
V
nA
V
MHz
pF
Typ.
Max.
Unit
Conditions
Transition frequency
hFE rank categories
Rank
P
Q
R
hFE
82 to 180
120 to 270
180 to 390
S
270 to 560
Electrical characterristic curves
Fig.1 Grounded emitter propagation
characteristics
0.2
COLLECTOR
CURRENT
:
Ic
(
mA)
50
20
10
5
2
1
0.5
0.2
0.1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VCE=
6V
BASE TO EMITTER VOLTAGE : VBE (
V)
Ta=100C
25C
40C
Fig.2 Grounded emitter output
characteristics (I)
0.4
4
8
1.2
0
2
6
10
0.8
1.6
2.0
3.5A
7.0
10.5
14.0
17.5
21.0
24.5
28.0
31.5
IB=0
Ta=25C
35.0
COLLECTOR
CURRENT
:
I
C
(
mA)
COLLECTOR TO MITTER VOLTAGE : VCE (
V)
Fig.3 Grounded emitter output
characteristics (II)
40
80
5
3
4
2
1
20
60
100
0
IB=0
Ta=25C
COLLECTOR
CURRENT
:
I
C
(
mA
)
COLLECTOR TO EMITTER VOLTAGE : VCE (
V)
50A
100
150
200
250
500
450
400
350
300
Fig.4 DC current gain vs.
collector current (I)
500
200
100
50
0.2 0.5 1 2
5 10 20 50 100
DC
CURRENT
GAIN
:
h
FE
Ta=25C
VCE=
5V
3V
1V
COLLECTOR CURRENT : IC (
mA)
Fig.5 DC current gain vs.
collector current (II)
500
200
100
50
0.2 0.5 1 2
5 10 20
50 100
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC (
mA)
VCE=
6V
Ta=100C
40C
25C
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
0.1
0.2 0.5 1 2
5 10 20 50 100
1
0.5
0.2
0.05
Ta=25C
COLLECTOR CURRENT : IC (
mA)
IC/IB=
50
20
10
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
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