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參數(shù)資料
| 型號： | 2SA1732-QTL |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 8000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TP-FA, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 38K |
| 代理商： | 2SA1732-QTL |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Epitaxial Planar Silicon Transistor
High-Speed Switching Applications
Ordering number:ENN3136
2SA1732
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40804TN (PC)/83098HA (KT)/6299MO, TS No.3136–1/4
Package Dimensions
unit:mm
2045B
[2SA1732]
Features
Adoption of FBET processes.
Large current capacity.
Low collector-to-emitter saturation voltage.
High-speed switching.
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SA1732]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
23
4
2.3
6.5
2.3
0.5
1.5
5.5
0.8
7.0
1.2
2.5
5.0
0.85
0.5
1.2
0 to 0.2
2.3
0.6
12
4
3
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PDF描述 |
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| 2SA1732-STL | 8000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1732-S | 8000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1734TE12L | 1200 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1736TE12R | 3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1736TE12L | 3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1733 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1734(TE12L,F) | 制造商:Toshiba 功能描述:PNP |
| 2SA1738 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA17380RL | 功能描述:TRANS PNP 15VCEO 50MA MINI-3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SA17390RL | 功能描述:TRANS PNP 15VCEO 50MA SMINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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