參數(shù)資料
型號(hào): 2SA1730-Q
元件分類: 功率晶體管
英文描述: 3 A, 40 V, PNP, Si, POWER TRANSISTOR
封裝: PCP, 3 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 82K
代理商: 2SA1730-Q
2SA1730
No.3134-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
DC Current Gain
hFE1VCE=--2V, IC=--500mA
70*
280*
hFE2VCE=--2V, IC=--3A
25
Gain-Bandwidth Product
fT
VCE=--2V, IC=--500mA
300
MHz
Output Capacitance
Cob
VCB=--10V, f=1MHz
35
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=--1.5A, IB=--75mA
--0.3
--0.8
V
Base-to-Emitterr Saturation Voltage
VBE(sat)
IC=--1.5A, IB=--75mA
--0.95
--1.3
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=--10μA, IE=0A
--50
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=--1mA, RBE=∞
--40
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=--10μA, IC=0A
--5
V
Turn-ON Time
ton
See specified Test Circuit.
50
100
ns
Storage Time
tstg
See specified Test Circuit.
120
220
ns
Turn-OFF Time
toff
See specified Test Circuit.
150
300
ns
*: The 2SA1730 is classified by 500mA hFE as follows:
Rank
Q
R
S
hFE
70 to 140
100 to 200
140 to 280
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7007B-004
VR
RL
VCC=--25V
VBE=1V
IC=20IB1= --20IB2= --1.5A
+
50Ω
INPUT
OUTPUT
RB
100μF
470μF
PW=20μs
IB2
D.C.≤1%
IB1
相關(guān)PDF資料
PDF描述
2SA1730R 3 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-243
2SA1730 3 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-243
2SA1730-S 3 A, 40 V, PNP, Si, POWER TRANSISTOR
2SA1730S 3 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-243
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