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參數(shù)資料
| 型號(hào)： | 2SA1650 |
| 廠商： | NEC Corp. |
| 英文描述： | PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 中文描述： | 進(jìn)步黨硅外延的高晶體管高速開關(guān) |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 148K |
| 代理商： | 2SA1650 |
Data Sheet D16122EJ1V0DS
2
2SA1650
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
100 V, I
E
= 0
10
μ
A
Emitter cutoff current
I
EBO
V
EB
=
5 V, I
C
= 0
10
μ
A
DC current gain
h
FE1
*
V
CE
=
2 V, I
C
=
0.5 A
100
DC current gain
h
FE2
*
V
CE
=
2 V, I
C
=
1 A
100
400
DC current gain
h
FE3
*
V
CE
=
2 V, I
C
=
3 A
60
Collector saturation voltage
V
CE(sat)1
*
I
C
=
3 A, I
B
=
0.15 A
0.3
V
Collector saturation voltage
V
CE(sat)2
*
I
C
=
4 A, I
B
=
0.2 A
0.5
V
Base saturation voltage
V
BE(sat)1
*
I
C
=
3 A, I
B
=
0.15 A
1.2
V
Base saturation voltage
V
BE(sat)2
*
I
C
=
4 A, I
B
=
0.2 A
1.5
V
Gain bandwidth product
f
T
V
CE
=
10 V, I
C
=
0.5 A
150
MHz
Collector capacitance
C
ob
V
CB
=
10 V, I
E
= 0, f = 1 MHz
130
pF
Turn-on time
t
on
0.3
μ
s
Storage time
t
stg
1.5
μ
s
Fall time
t
f
I
C
=
3 A, I
B1
=
I
B2
=
0.15 A,
R
L
= 10
, V
CC
=
50 V
Refer to the test circuit.
0.4
μ
s
* Pulse test PW
≤
350
μ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME TEST CIRCUIT
Base current
waveform
Collector current
waveform
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