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參數(shù)資料
| 型號(hào)： | 2SA1649-ZM |
| 廠商： | NEC Corp. |
| 英文描述： | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
| 中文描述： | 5個(gè)引腳µ帶看門狗和手動(dòng)復(fù)位的P監(jiān)控電路 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 143K |
| 代理商： | 2SA1649-ZM |
Document No. D15588EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1649, 2SA1649-Z
PNP SILICON EPITAXIAL POWER TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1649 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
Available for high-current control in small dimension
Z type is a lead processed product and is deal for mounting a
hybrid IC.
Mold package that does not require an insulating board or
insulation bushing
Low collector saturation voltage:
V
CE(sat)
=
0.3 V MAX. (@I
C
=
3 A)
Fast switching speed:
t
f
= 0.3
μ
s MAX. (@I
C
=
3 A)
High DC current amplifiers and excellent linearity
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
40
V
Collector to emitter voltage
V
CEO
30
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
10
A
Collector current (pulse)
I
C(pulse)
*
20
A
Base current (DC)
I
B(DC)
3.5
A
Total power dissipation
P
T
(Tc = 25
C)
15
W
Total power dissipation
P
T
(Ta = 25
°
C)
1.0**, 2.0***
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
PACKAGE DRAWING (UNIT: mm)
*:
**: Printing board mounted
***: 7.5 mm
PW
≤
300
μ
s, duty cycle
≤
10%
2
×
0.7 mm ceramic board mounted
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1650 | PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 2SA1650K | TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-220VAR |
| 2SA1650L | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
| 2SA1650M | TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-220VAR |
| 2SA1652 | PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1650-K(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1650-L(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1652-K(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1652-L(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1656 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR SPA-50V -.1A .3W ECB |
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