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參數(shù)資料
| 型號： | 2SA1648-K |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, MP-3, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 147K |
| 代理商： | 2SA1648-K |
Document No. D16121EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1648, 2SA1648-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1648 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
Available for high-current control in small dimension
Z type is a lead processed product and is deal for mounting a
hybrid IC.
Mold package that does not require an insulating board or
insulation bushing
Low collector saturation voltage:
VCE(sat) =
0.3 V MAX. (@IC = 3 A)
Fast switching speed:
tf = 0.3
s MAX. (@IC = 3 A)
High DC current gain and excellent linearity
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
5.0
A
Collector current (pulse)
IC(pulse)*
10
A
Base current (DC)
IB(DC)
2.5
A
Total power dissipation
PT (Tc = 25
°C)
18
W
Total power dissipation
PT (Ta = 25
°C)
1.0**, 2.0***
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
*:
PW
≤ 300
s, duty cycle ≤ 10%
**: Printing board mounted
***: 7.5 mm
2
× 0.7 mm ceramic board mounted
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1648-L | 5 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2SA1648-AZ | 5 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2SA1649-ZL | 10000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252AA |
| 2SA1649-L | 10000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-251AA |
| 2SA1649-ZK | 10000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1648-K(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1648-L(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1648-L-Z(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1648-M-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1648-Z-AZ | 制造商:Renesas Electronics 功能描述:Trans GP BJT PNP 60V 5A 3-Pin(2+Tab) TO-252 Cut Tape 制造商:Renesas 功能描述:Trans GP BJT PNP 60V 5A 3-Pin(2+Tab) TO-252 |
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