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參數(shù)資料
| 型號： | 2SA1647M |
| 廠商： | NEC Corp. |
| 英文描述： | TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-251VAR |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 100V的五（巴西）總裁| 5A條一（c）|至251VAR |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 160K |
| 代理商： | 2SA1647M |
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1647 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
Available for high-current control in small dimension
Z type is a lead processed product and is deal for mounting a
hybrid IC.
Low collector saturation voltage:
V
CE(sat)
=
0.3 V MAX. (@I
C
=
3 A)
Fast switching speed:
t
f
= 0.4
μ
s MAX. (@I
C
=
3 A)
High DC current gain and excellent linearity
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
150
V
Collector to emitter voltage
V
CEO
100
V
Base to emitter voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
5.0
A
Collector current (pulse)
I
C(pulse)
*
10
A
Base current (DC)
I
B(DC)
2.5
A
Total power dissipation
P
T
(Tc = 25
°
C)
18
W
Total power dissipation
P
T
(T
A
= 25
°
C)
1.0**, 2.0***
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
PACKAGE DRAWING (UNIT: mm)
#$
&
$#
#
*:
**: Printing board mounted
***: 7.5 mm
×
0.7 mm ceramic board mounted
PW
≤
10 ms, duty cycle
≤
50%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1647-ZK | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
| 2SA1647-ZL | TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-252 |
| 2SA1647-ZM | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
| 2SA1648-Z | PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 2SA1648 | PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1647-Z-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT PNP 100V 5A 3-Pin(2+Tab) TO-252 |
| 2SA1647-Z-AZ-K | 制造商:Renesas Electronics 功能描述:PNP |
| 2SA1648-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP TRANSISTOR,60V,5.0A,TO-251 制造商:Renesas 功能描述:Trans GP BJT PNP 60V 5A 3-Pin(3+Tab) TO-251 |
| 2SA1648-AZ(L) | 制造商:Renesas Electronics 功能描述:PNP 制造商:Renesas Electronics 功能描述:PNP Bulk |
| 2SA1648-AZ-K | 制造商:Renesas Electronics 功能描述:Bulk |
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