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參數(shù)資料
| 型號： | 2SA1627M-AZ |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 600 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 147K |
| 代理商： | 2SA1627M-AZ |
2SC4958
2
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Collector Cutoff Current
ICBO
0.1
AVCB = 5 V, IE = 0
Emitter Cutoff Current
IEBO
0.1
AVEB = 1 V, IC = 0
DC Current Gain
hFE
75
150
VCE = 3 V, IC = 5 mA*1
Gain Bandwidth Product
fT
12
GHz
VCE = 3 V, IC = 5 mA, f = 2.0 GHz
Feed back Capacitance
Cre
0.3
0.5
pF
VCB = 3 V, IE = 0, f = 1 MHz*2
Insertion Power Gain
|S21e|2
7
8.5
dB
VCE = 3 V, IC = 5 mA, f = 2.0 GHz
Noise Figure
NF
2.5
4.0
dB
VCE = 3 V, IC = 3 mA, f = 2.0 GHz
*1
Pulse Measurement ; PW
≤ 350
s, Duty Cycle ≤ 2 % Pulsed.
*2
Measured with 3 terminals bridge, Emitter and Case should be grounded.
hFE Classification
Rank
T82
Marking
T82
hFE
75 to 150
TYPICAL CHARACTERISTICS (TA = 25
°C)
50
200
100
0
50
100
150
60 mW
40
30
20
10
0
0.5
1
VCE = 3 V
TOTAL POWER DISSIPATION
vs.AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Free Air
P
T–
Total
Power
Dissipation
–
mW
IC
–
Collector
Current
–
mA
TA – Ambient Temperature – °C
VBE – Base to Emitter Voltage – V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1627M | 1000 mA, 600 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1633F | 10 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-247 |
| 2SA1633E | 10 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-247 |
| 2SA1633 | 10 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-247 |
| 2SA1635E | 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220FP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1633 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1641S-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 20V 8A TO-251 |
| 2SA1643 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1645-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1645-L-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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