參數(shù)資料
型號: 2SA1579T106R
元件分類: 小信號晶體管
英文描述: 50 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: UMT3, SC-70, 3 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 75K
代理商: 2SA1579T106R
2SA1579 / 2SA1514K / 2SA1038S
Transistors
Rev.A
3/3
Electrical characteristic curves
0
20
16
12
8
4
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
2
4
6
8
10
COLLECTOR
CURRENT
:
I
C
(mA)
Fig.1 Ground emitter output characteristics
Ta
=25°C
25.0
22.5
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5A
IB
=0
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
BASE TO EMITTER VOLTAGE : VBE (V)
0.1
0.2
0.5
1
2
5
10
20
50
COLLECTOR
CURRENT
:
I
C
(mA)
Fig.2 Ground emitter propagation
characteristics
VCE
= 6V
Ta
=25°C
500
200
100
50
0.2
0.5
1
2
5
10
20
50
Fig.3 DC current gain vs. collector current
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(mA)
Ta
=25°C
VCE
= 1V
5V
3V
0.05
0.1
0.2
0.5
0.2
0.5
1
2
5
10
20
50
Fig.4 Collector-Emitter saturation voltage
vs. collector current
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
COLLECTOR CURRENT : IC
(mA)
Ta
=25°C
IC/IB
=50/1
20/1
10/1
500
200
100
50
0.5
1
2
5
10
20
50
VCE
= 6V
Fig.5 Transition frequency
vs. emitter current
TRANSITION
FREQUENCY
:
f
T
(MH
Z
)
EMITTER CURRENT : IE
(mA)
Ta
=25°C
10
20
5
2
1
0.5
1
2
5
10
20
f
=1MHZ
IE
=0A
Fig.6 Collector output capacitance
vs. collector-base voltage
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF)
COLLECTOR TO BASE VOLTAGE : VCB
(V)
Ta
=25°C
Cob
10
20
5
2
1
0.5
1
2
5
10
20
Fig.7 Emitter input capacitance
vs. emitter-base voltage
EMITTER
INPUT
CAPACITANCE
:
Cib
(pF)
EMITTER TO BASE VOLTAGE : VEB
(V)
Cib
f
=1MHZ
IC
=0A
Ta
=25°C
相關(guān)PDF資料
PDF描述
2SA1038STPR 50 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1515STP/Q 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1515STP 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1516O 12 A, 180 V, PNP, Si, POWER TRANSISTOR
2SA1524 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA1579T106R/S 制造商:ROHM Semiconductor 功能描述:Transistor, PNP, General purpose, -120V
2SA1579T106S 功能描述:兩極晶體管 - BJT PNP 120V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SA1582 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR SPA-50V -.1A .3W ECB
2SA1585STPQ 功能描述:兩極晶體管 - BJT PNP 20V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SA1585STPR 功能描述:兩極晶體管 - BJT PNP 20V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2