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參數(shù)資料
| 型號(hào)： | 2SA1575-F |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PCP, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 31K |
| 代理商： | 2SA1575-F |
2SA1575 / 2SC4080
No.3171-1/4
Features
High fT.
High breakdown voltage.
Small reverse transfer capacitance and excellent high-frequency characteristic.
Adoption of FBET process.
Specifications ( ) : 2SA1575
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)200
V
Collector-to-Emitter Voltage
VCEO
(--)200
V
Emitter-to-Base Voltage
VEBO
(--)4
V
Collector Current
IC
(--)100
mA
Collector Current (Pulse)
ICP
(--)200
mA
Collector Dissipation
PC
500
mW
Mounted on a ceramic board (250mm2!0.8mm)
1.3
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)150V, IE=0A
(--)0.1
A
Emitter Cutoff Current
IEBO
VEB=(--)2V, IC=0A
(--)1.0
A
DC Current Gain
hFE1VCE=(--)10V, IC=(--)10mA
40*
320*
hFE2VCE=(--)10V, IC=(--)60mA
20
Gain-Bandwidth Product
fT
VCE=(--)30V, IC=(--)30mA
400
MHz
Output Capacitance
Cob
VCB=(--)30V, f=1MHz
(2.3)1.8
pF
Reverse Transfer Capacitance
Cre
VCB=(--)30V, f=1MHz
(1.7)1.4
pF
Marking : 2SA1575 : AF / 2SC4080 : CI
Continued on next page.
* : The 2SA1575 / 2SC4080 are classified by 10mA hFE as follows :
Rank
C
D
E
F
hFE
40 to 80
60 to 120
100 to 200
160 to 320
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN3171A
83006AA MS IM TC-00000151 / 72098HA (KT) / 7139MO, TS
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
2SA1575 / 2SC4080
PNP / NPN Epitaxial Planar Silicon Darlington Transistors
High-Frequency Amplifier,
Wide-Band Amplifier Applications
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1575-D | 100 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1575-D | 100 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4080 | 100 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243 |
| 2SA1575-C | 100 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1575-E | 100 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1576 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR SUB:2SA1576A |
| 2SA1576A | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR 制造商:ROHM Semiconductor 功能描述:Transistor, PNP, General purpose, -50V, |
| 2SA1576A T106 | 制造商:Rohm 功能描述:PNP Cut Tape |
| 2SA1576ART1 | 功能描述:兩極晶體管 - BJT 100mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1576ART1G | 功能描述:兩極晶體管 - BJT 100mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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