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參數(shù)資料
| 型號(hào)： | 2SA1533Q |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, TO-92NL-A1, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 248K |
| 代理商： | 2SA1533Q |
Transistors
1
Publication date: Nobember 2002
SJC00022BED
2SA1533
Silicon PNP epitaxial planar type
For low-frequency driver amplification
Complementary to 2SC3939
■ Features
Low collector-emitter voltage (Base open) V
CEO
Optimum for the driver stage of a low-frequency and 25 W to 30
W output amplifier.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
80
V
Collector-emitter voltage (Base open)
VCEO
80
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
0.5
A
Peak collector current
ICP
1A
Collector power dissipation
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 A, IE = 0
80
V
Collector-emitter voltage (Base open)
VCEO
IC = 100 A, IB = 0
80
V
Emitter-base voltage (Collector open)
VEBO
IE
= 10 A, I
C
= 0
5V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
0.1
A
Forward current transfer ratio
hFE1 *
VCE = 10 V, IC = 150 mA
90
220
hFE2
VCE =
5 V, I
C =
500 mA
50
100
Collector-emitter saturation voltage
VCE(sat)
IC = 300 mA, IB = 30 mA
0.2
0.4
V
Base-emitter saturation voltage
VBE(sat)
IC = 300 mA, IB = 30 mA
0.85
1.2
V
Transition frequency
fT
VCB
= 10 V, I
E
= 50 mA, f = 200 MHz
120
MHz
Collector output capacitance
Cob
VCB
= 10 V, I
E
= 0, f = 1 MHz
11
20
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a = 25°C ± 3°C
Unit: mm
2.3
±
0.2
5.0±0.2
0.7±0.1
4.0±0.2
8.0
±
0.2
0.7
±
0.2
13.5
±
0.5
2.54±0.15
(1.27)
0.45
+0.2
–0.1
0.45
+0.15
–0.1
13
2
1 : Emitter
2 : Collector
3 : Base
TO-92NL-A1 Package
Rank
Q
R
hFE1
90 to 155
130 to 220
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1534AQRTA | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1534AR | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1534ARA | 功能描述:TRANS PNP 50VCEO 1A TO-92NL RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SA1534ASA | 功能描述:TRANS PNP 50VCEO 1A TO-92NL RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SA1535 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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