參數(shù)資料
型號: 2SA1499Q
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: 0.6 A, 400 V, PNP, Si, POWER TRANSISTOR
封裝: TO-220, FULL PACK-3
文件頁數(shù): 1/1頁
文件大?。?/td> 177K
代理商: 2SA1499Q
1
Power Transistors
2SA1499
Silicon PNP epitaxial planar type
For high-speed switching
s Features
q
High foward current transfer ratio hFE
q
High-speed switching
q
High collector to base voltage VCBO
q
Full-pack package which can be installed to the heat sink with
one screw.
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–400
–7
–1.2
– 0.6
25
2
150
–55 to +150
Unit
V
A
W
C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE1
*
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = –400V, IE = 0
VEB = –7V, IC = 0
IC = –10mA, IB = 0
VCE = –5V, IC = –100mA
VCE = –5V, IC = –300mA
IC = –300mA, IB = –60mA
VCE = –10V, IC = –100mA, f = 1MHz
IC = –300mA,
IB1 = –60mA, IB2 = 60mA,
VCC = –100V
min
–400
30
10
typ
15
max
–100
160
–1.0
–1.2
1.0
3.5
1.0
Unit
A
V
MHz
s
*h
FE1 Rank classification
Rank
Q
P
O
hFE1
30 to 60
50 to 100
80 to 160
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
TC=25°C
Ta=25
°C
10.0
±0.2
5.5
±0.2
7.5
±0.2
16.7
±0.3
0.7
±0.1
14.0
±0.5
Solder
Dip
4.0
0.5
+0.2
–0.1
1.4
±0.1
1.3
±0.2
0.8
±0.1
2.54
±0.25
5.08
±0.5
2
13
2.7
±0.2
4.2
±0.2
4.2
±0.2
φ3.1±0.1
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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