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參數(shù)資料
| 型號： | 2SA1430 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 136K |
| 代理商： | 2SA1430 |
2SA1430
2006-11-09
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1430
Strobe Flash Applications
Medium Power Amplifier Applications
High DC current gain and excellent hFE linearity
: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 60 (min), 120 (typ.) (VCE = 1 V, IC = 4 A)
Low saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 2 A, IB = 50 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
VCES
20
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
6
V
DC
IC
2
Collector current
Pulsed
(Note 1)
ICP
4
A
Base current
IB
2
A
Collector power dissipation
PC
1000
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1430-B(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1430-C(F) | 制造商:Toshiba America Electronic Components 功能描述: |
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| 2SA1431-Y(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1432-O(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 300V 0.1A 3-Pin MSTM |
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