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參數(shù)資料
| 型號： | 2SA1390 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進步黨 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 23K |
| 代理商： | 2SA1390 |
2SA1390
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
–35
V
Collector to emitter voltage
–35
V
Emitter to base voltage
–4
V
Collector current
–500
mA
Collector power dissipation
300
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–35
—
—
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–35
—
—
V
I
C
= –1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
–4
—
—
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
V
CE(sat)
—
—
–0.5
μ
A
V
CB
= –20 V, I
E
= 0
I
C
= –150 mA, I
B
= –15 mA*
2
Collector to emitter saturation
voltage
—
–0.2
–0.6
V
DC current transfer ratio
h
FE1
*
1
h
FE2
V
BE
60
—
320
V
CE
= –3 V, I
C
= –10 mA
V
CE
= –3 V, I
C
= –500 mA*
2
V
CE
= –3 V, I
C
= –10 mA
DC current transfer ratio
10
—
—
Base to emitter voltage
Notes: 1. The 2SA1390 is grouped by h
FE1
as follows.
2. Pulse test
B
C
—
–0.64
—
V
D
60 to 120
100 to 200
160 to 320
See characteristic curves of 2SA673.
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