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參數(shù)資料
| 型號(hào)： | 2SA1386A |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP Epitaxial Planar Transistor(硅PNP外延平面晶體管) |
| 中文描述： | 15 A, 180 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | MT-100, TO-3P, 3 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 24K |
| 代理商： | 2SA1386A |
h
FE
Rank O(50to100), P(70to140), Y(90to180)
18
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC3519/A)
Application :
Audio and General Purpose
External Dimensions
MT-100(TO3P)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
–5
–15
–4
130(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–40
4
–10
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
2SA1386
–100
max
–160
–160
min
Unit
μ
A
V
μ
A
V
V
MHz
pF
Conditions
V
CB
=
V
EB
=–5V
I
C
=–25mA
V
CE
=–4V, I
C
=–5A
I
C
=–5A, I
B
=–0.5A
V
CE
=–12V, I
E
=2A
V
CB
=–10V, f=1MHz
LAPT
2SA1386/1386A
(Ta=25°C)
(Ta=25°C)
R
L
(
)
I
C
(A)
V
(V)
5
I
B2
(A)
1
t
on
(
μ
s)
0.3typ
t
stg
(
μ
s)
0.7typ
t
f
(
μ
s)
0.2typ
I
(A)
–1
V
(V)
–10
2SA1386A
–100
max
–180
–180
min
–100
max
50
min
–2.0
max
40
typ
500
typ
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
Safe Operating Area
(Single Pulse)
h
FE
–I
C
Temperature
Characteristics
(Typical)
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
0
0
–5
–10
–15
–1
–2
–3
–4
Collector-Emitter Voltage V
CE
(V)
C
C
(
–50mA
–100mA
I
B
=–20mA
–700mA
–500mA
–400mA
–300mA
–200mA
–150mA
0
–3
–2
–1
0
–0.2
–0.4
–1.0
–0.6
–0.8
Base Current I
B
(A)
C
C
(
I
C
=–10A
–5A
–0.02
–0.1
–1
–10
–0.5
–5
–15
10
100
300
Collector Current I
C
(A)
D
F
(V
CE
=–4V)
Typ
Collector-Emitter Voltage V
CE
(V)
C
C
(
–3
–10
–50
–100
–200
–0.1
–0.05
–1
–0.5
–10
–40
–5
10ms
Without Heatsink
Natural Cooling
1.2SA1386
2.2SA1386A
1
2
DC
0.02
0.1
1
10
0
20
40
60
C
T
(
Z
)
(V
CE
=–12V)
Emitter Current I
E
(A)
Typ
f
T
–I
E
Characteristics
(Typical)
130
100
50
3.5
0
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
0
25
50
75
100
125
150
0
–15
–10
–5
0
–2
–1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=–4V)
15 a ep
–(sTm
(V
CE
=–4V)
–0.02
–0.1
–0.5
–1
–5
–10 –15
20
50
100
200
Collector Current I
C
(A)
D
F
125C
25C
–30C
θ
j-a
–t
Characteristics
0.1
1
3
0.5
1
10
100
1000
2000
Time t(ms)
T
θ
j
(
15.6
±0.4
9.6
1
±
4
2
5
±
1
3.2
±0.1
2
3
1.05
+0.2
-0.1
2
4
B
E
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
2SA1386
–160
–160
2SA1386A
–180
–180
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