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參數(shù)資料
| 型號： | 2SA1362-GR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | 2-3F1A, SC-59, TO-236MOD, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 200K |
| 代理商： | 2SA1362-GR |
2SA1362
2003-03-27
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1362
Low Frequency Power Amplifier Applications
Power Switching Applications
High DC current gain: hFE = 120~400
Low saturation voltage: VCE (sat) = 0.2 V (max)
(IC = 400 mA, IB = 8 mA)
Suitable for driver stage of small motor
Small package
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
15
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
800
mA
Base current
IB
160
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Marking
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1362-GR(T5L,F,T | 功能描述:兩極晶體管 - BJT Bipolar Small-Signal Transistors RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1362-GR(TE85L,F | 制造商:Toshiba 功能描述:PNP |
| 2SA1362-Y(TE85L,F) | 制造商:Toshiba 功能描述:PNP |
| 2SA1364-T11-1E | 制造商:Mitsubishi Electric 功能描述: |
| 2SA1365 | 制造商:Distributed By MCM 功能描述:SUB ONLY MITS. TRANS. SC-59-25V -.7A .15WSURFACE MOUNT |
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