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參數(shù)資料
| 型號： | 2SA1358-O |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 120 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | 2-8H1A, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 119K |
| 代理商： | 2SA1358-O |
2SA1358
2004-07-07
3
C
ollec
tor
po
wer
dis
si
pati
on
P
C
(W
)
C
olle
ct
or
cur
re
nt
I
C
(m
A)
Collector-emitter voltage VCE (V)
IC – VCE
Coll
ect
or
cur
re
nt
I
C
(m
A)
Collector current IC (mA)
hFE – IC
D
C
c
urr
en
tg
ai
n
h
FE
Collector current IC (mA)
VCE (sat) – IC
Col
lect
or
-e
m
itte
rs
a
tu
ra
tion
volta
g
e
V
CE
(s
a
t)
(
V
)
Base-emitter voltage VBE (V)
IC – VBE
Ambient temperature Ta (°C)
PC – Ta
Safe Operating Area
Coll
ect
or
cur
re
nt
I
C
(m
A)
Collector-emitter voltage VCE (V)
25
Common emitter
IC/IB = 10
3
0.03
0.1
0.3
30
100
Tc = 100°C
25
1000
300
10
0.05
0.5
1
(1) Tc = Ta Infinite heat sink
(2) No heat sink
0
40
60
100
80
20
12
0
4
2
6
(1)
(2)
120
140
160
8
10
25
10
300
Common emitter
VCE = 5 V
30
50
100
1000
30
100
1000
Tc = 100°C
25
300
3
500
3
10
30
100
300
10
50
300
500
1000
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
100
3000
IC max (pulsed)*
IC max (continuous)
VCEO max
1 ms*
10 ms*
100 ms*
DC operation
Tc = 25°C
30
25
Common emitter
VCE = 5 V
1000
400
600
800
Tc = 100°C
25
200
0.2
0.4
0.8
1.0
0.6
0
1.2
0
Common emitter
Tc = 25°C
1200
600
6
8
12
10
3
4
15
7
IB = 1 mA
0
5
4
2
200
400
800
1000
2
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PDF描述 |
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| 2SA1358-Y | 1 A, 120 V, PNP, Si, POWER TRANSISTOR |
| 2SA1360-Y | 0.05 A, 150 V, PNP, Si, POWER TRANSISTOR |
| 2SA1374CTZ | 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1374CRF | 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1358-O(Q) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Cut Tape |
| 2SA1358Y | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1358-Y(Q) | 制造商:Toshiba 功能描述:PNP Bulk 制造商:Toshiba 功能描述:Trans GP BJT PNP 120V 1A 3-Pin TO-126IS |
| 2SA1359-Y(Q) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1360-O(Q) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Bulk |
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