參數(shù)資料
型號: 2SA1337
廠商: Hitachi,Ltd.
英文描述: Silicon PNP Epitaxial
中文描述: 硅外延進步黨
文件頁數(shù): 2/5頁
文件大?。?/td> 24K
代理商: 2SA1337
2SA1337
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
–55
V
Collector to emitter voltage
–50
V
Emitter to base voltage
–5
V
Collector current
–100
mA
Collector power dissipation
300
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–55
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–50
V
I
C
= –1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
–5
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
V
BE
V
CE(sat)
–0.5
μ
A
μ
A
V
CB
= –18 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V, I
C
= –2 mA
V
CE
= –12 V, I
C
= –2 mA
I
C
= –10 mA, I
B
= –1 mA
Emitter cutoff current
–0.5
DC current transfer ratio
100
320
Base to emitter voltage
–0.75
V
Collector to emitter saturation
voltage
–0.2
V
Gain bandwidth product
f
T
Cob
200
MHz
V
CE
= –12 V, I
C
= –2 mA
V
CB
= –10 V, I
E
= 0, f = 1 MHz
V
CE
= –6 V, I
= –0.1 mA,
R
g
= 1 k
, f = 1 kHz
Collector output capacitance
4.5
pF
Noise figure
NF
1.0
5.0
dB
Note:
B
1. The 2SA1337 is grouped by h
FE
as follows.
C
100 to 200
160 to 320
See characteristic curves of 2SA1031.
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