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參數(shù)資料
| 型號(hào)： | 2SA1254 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type |
| 中文描述： | 30 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 38K |
| 代理商： | 2SA1254 |
1
Transistor
2SA1254
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC2206
I
Features
G
High transition frequency f
T
.
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
6.9
±
0.1
0.55
±
0.1
0.45
±
0.05
1
±
0
1
2.5
±
0.1
1.0
1.5
1.5 R0.9
R0.9
R07
0
0.85
3
±
0
2
±
0
2
±
0
1
±
0
4
±
0
4
±
0
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–30
–20
–5
–60
–30
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector to emitter saturation voltage
Base to emitter voltage
Noise figure
Reverse transfer impedance
Common emitter reverse transfer capacitance
Symbol
I
CBO
I
CEO
I
EBO
h
FE*
f
T
V
CE(sat)
V
BE
NF
Z
rb
C
re
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –20V, I
B
= 0
V
EB
= –5V, I
C
= 0
V
CE
= –10V, I
C
= –1mA
V
CB
= –10V, I
E
= 1mA, f = 200MHz
I
C
= –10mA, I
B
= –1mA
V
CE
= –10V, I
C
= –1mA
V
CB
= –10V, I
E
= 1mA, f = 5MHz
V
CB
= –10V, I
E
= 1mA, f = 2MHz
V
CE
= –10V, I
C
= –1mA, f = 10.7MHz
min
70
150
typ
300
– 0.1
– 0.7
2.8
22
1.2
max
– 0.1
–100
–10
220
4.0
50
2.0
Unit
μ
A
μ
A
μ
A
MHz
V
V
dB
pF
*
h
FE
Rank classification
Rank
B
C
h
FE
70 ~ 140
110 ~ 220
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1255 | TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS) |
| 2SA1261 | PNP EPITAXIAL SILICON TRANSISTOR |
| 2SA1263 | SILICON PNP TRIPLE DIFFUSED TYPE |
| 2SA1264 | SILICON PNP TRIPLE DIFFUSED TYPE |
| 2SA1265 | SILICON PNP TRIPLE DIFFUSED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1254-B | 制造商:Mitsubishi Electric 功能描述:Bipolar Junction Transistor, PNP Type, SC-71 |
| 2SA1255 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTOR SC -200V -.05A .15W EBC SURFCE MT |
| 2SA1255-O(TE85L,F) | 制造商:Toshiba 功能描述:PNP |
| 2SA1255-Y(TE85L,F) | 制造商:Toshiba 功能描述:PNP |
| 2SA1256 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANS. SC-59-30V -.03A .15W SURFACE MOUNT |
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