參數(shù)資料
型號: 2SA1244Y
元件分類: 小信號晶體管
英文描述: 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, 2-7J1A, 3 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 166K
代理商: 2SA1244Y
2SA1244
2010-08-27
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1244
High Current Switching Applications
Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A)
High speed switching time: tstg = 1.0 μs (typ.)
Complementary to 2SC3074
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
5
A
Base current
IB
1
A
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
20
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
相關PDF資料
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2SA1244O 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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