
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
MECHANICAL DATA
Case: Molded plastic
*
Epoxy: UL 94V-O rate flame retardant
*
Lead: MIL-STD-202E method 208C guaranteed
*
Mounting position: Any
*
Weight: 0.008 gram
SOT-23
2SA1235A
2006-3
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CLASSIFICATION OF hFE(1)
RANK
Collector-Base Breakdown Voltage (IC= -100 mA, IE=0)
Collector-Emitter Breakdown Voltage (IC= -100 mA, IB=0)
Emitter-Base Breakdown Voltage (IE= -100 mA, IC=0)
SYMBOL
MAX
MIN
-60
-50
-6
90
180
5
20
-1
-0.3
MHZ
d
B
d
B
500
-0.1
150
V(BR)CBO
V(BR)CEO
VCE(sat)
V(BR)EBO
UNITS
V
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
Dimensions in inches and (millimeters)
0.118(3.00)
0.012(0.30)
0.020(0.50)
0.003(0.08)
0.006(0.15)
0.110(2.80)
0.019(2.00)
0.071(1.80)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
1
3
BASE
EMITTER
COLLECTOR
2
1
3
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.047(1.20)
0.055(1.40)
ICBO
hFE
m
A
m
A
Collector Cut-Off Current (VCB= -60V, IE=0)
Emitter Cut-Off Current (VEB= -6V, IC=0)
DC Current Gain(VCB= -6V, IC= -1mA)
DC Current Gain(VCE= -6V, IC= -0.1mA)
Collector-Emitter Saturation Voltage(IC=-100 mA, IB= -10mA)
Base-Emitter Saturation Voltage(IC=-100 mA, IB= -10mA)
Tiansition Frequency(VCE= -6V, IC= -10mA)
Collector Output Capacitance(VCE= -6V, IE=0, f=1MHZ)
Noise Figure(VCE= -6V, IE= 0.3mA, f=100HZ, RG=10KW)
IEBO
Range
Marking
CHARACTERISTICS
* Power dissipation
PCM :
0.2
W(Tamb=25OC)
* Collector current
ICM :
-0.2
A
* Collector-base voltage
V(BR)CBO :
-60
V
* Operating and storage junction temperature range
TJ,Tstg: -55OC to +150OC
VBE(sat)
fT
Cob
NF
E
150~300
M E
F
250~500
-
.
M E
.