參數(shù)資料
型號: 2SA1200-Y
元件分類: 小信號晶體管
英文描述: 50 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: LEAD FREE, 2-5K1A, SC-62, 3 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 172K
代理商: 2SA1200-Y
2SA1200
2006-11-09
1
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
2SA1200
High Voltage Switching Applications
High voltage: VCEO = 150 V
High transition frequency: fT = 120 MHz (typ.)
Small flat package
PC = 1 to 2 W (mounted on a ceramic substrate)
Complementary to 2SC2880
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
150
V
Collector-emitter voltage
VCEO
150
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
50
mA
Base current
IB
10
mA
PC
500
Collector power dissipation
PC
(Note 1)
800
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: 2SA1200 mounted on a ceramic substrate (250 mm
2 × 0.8 t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
PW-MINI
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
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