參數(shù)資料
型號: 2SA1191-E
元件分類: 小信號晶體管
英文描述: SMALL SIGNAL TRANSISTOR, TO-92
文件頁數(shù): 4/10頁
文件大?。?/td> 43K
代理商: 2SA1191-E
2SA1190, 2SA1191
3
Electrical Characteristics (Ta = 25°C)
2SA1190
2SA1191
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–90
–120
V
I
C = –10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–90
–120
V
I
C = –1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
–5
V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
–0.1
–0.1
AV
CB = –70 V, IE = 0
Emitter cutoff current
I
EBO
–0.1
–0.1
AV
EB = –2 V, IC = 0
DC current trnsfer ratio
h
FE*
1
250
800
250
800
V
CE = –12 V,
I
C = –2 mA*
2
Collector to emitter
saturation voltage
V
CE(sat)
–0.05 –0.15 —
–0.05 –0.15 V
I
C = –10 mA,
I
B = –1 mA*
2
Base to emitter
saturation voltage
V
BE(sat)
–0.7
–1.0
–0.7
–1.0
V
Gain bandwidth product f
T
130
130
MHz
V
CE = –6 V,
I
C = –10 mA
Collector output
capacitance
Cob
3.2
3.2
pF
V
CB = –10 V, IE = 0,
f = 1 MHz
Noise figure
NF
0.15
1.5
0.15
1.5
dB
V
CE = –6 V,
I
C = –0.1 mA,
R
g = 10 k
f = 1 kHz
0.2
2.0
0.2
2.0
dB
V
CE = –6 V,
I
C = –0.1 mA,
R
g = 10 k
f = 10 Hz
Noise voltage reffered
to input
e
n
0.7
0.7
nV/
√Hz
V
CB = –6 V,
I
C = –10 mA,
Rg = 0, f = 1 kHz
Notes: 1. The 2SA1190 and 2SA1191 are grouped by h
FE as follows.
2. Pulse test
DE
250 to 500
400 to 800
相關(guān)PDF資料
PDF描述
2SA1190DTZ-E 100 mA, 90 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1191-E SMALL SIGNAL TRANSISTOR, TO-92
2SA1190-D SMALL SIGNAL TRANSISTOR, TO-92
2SA1190-D SMALL SIGNAL TRANSISTOR, TO-92
2SA1191-D SMALL SIGNAL TRANSISTOR, TO-92
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