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參數(shù)資料
| 型號： | 2SA1189 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進(jìn)步黨 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 24K |
| 代理商： | 2SA1189 |
2SA1188, 2SA1189
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
2SA1188
2SA1189
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
Tj
–90
–120
V
Collector to emitter voltage
–90
–120
V
Emitter to base voltage
–5
–5
V
Collector current
–100
–100
mA
Emitter current
100
100
mA
Collector power dissipation
400
400
mW
Junction temperature
150
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
–55 to +150
Electrical Characteristics
(Ta = 25°C)
2SA1188
2SA1189
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–90
—
—
–120
—
—
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–90
—
—
–120
—
—
V
I
C
= –1 mA, R
BE
=
∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
—
—
–5
—
—
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
—
—
–0.1
—
—
–0.1
μ
A
μ
A
V
CB
= –70 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V,
I
C
= –2 mA*
2
I
C
= –10 mA,
I
B
= –1 mA*
2
Emitter cutoff current
—
—
–0.1
—
—
–0.1
DC current trnsfer ratio
250
—
800
250
—
800
Collector to emitter
saturation voltage
V
CE(sat)
—
–0.05 –0.15 —
–0.05 –0.15 V
Base to emitter
saturation voltage
V
BE(sat)
—
–0.7
–1.0
—
–0.7
–1.0
V
Gain bandwidth product f
T
—
130
—
—
130
—
MHz
V
CE
= –6 V,
I
C
= –10 mA
V
= –10 V, I
E
= 0,
f = 1 MHz
Collector output
capacitance
Notes: 1. The 2SA1188 and 2SA1189 are grouped by h
FE
as follows.
2. Pulse test
D
E
Cob
—
3.2
—
—
3.2
—
pF
250 to 500
400 to 800
See characteristic curves of 2SA1190 and 2SA1191.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1190 | Silicon PNP Epitaxial |
| 2SA1191 | Silicon PNP Epitaxial |
| 2SA1193K | Silicon PNP Epitaxial, Darlington |
| 2SA1193 | Silicon PNP Epitaxial, Darlington |
| 2SA1194 | Silicon PNP Epitaxial |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1189D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1189E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1190 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial |
| 2SA1190D | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT PNP 90V 0.1A 3-Pin TO-92 |
| 2SA1190DTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
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