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參數(shù)資料
| 型號(hào)： | 2SA1189-E |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 22K |
| 代理商： | 2SA1189-E |
2SA1188, 2SA1189
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SA1188
2SA1189
Unit
Collector to base voltage
V
CBO
–90
–120
V
Collector to emitter voltage
V
CEO
–90
–120
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–100
mA
Emitter current
I
E
100
mA
Collector power dissipation
P
C
400
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SA1188
2SA1189
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–90
—
–120
—
V
I
C = –10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–90
—
–120
—
V
I
C = –1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
—
–5
—
V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
—
–0.1
—
–0.1
AV
CB = –70 V, IE = 0
Emitter cutoff current
I
EBO
—
–0.1
—
–0.1
AV
EB = –2 V, IC = 0
DC current trnsfer ratio
h
FE*
1
250
—
800
250
—
800
V
CE = –12 V,
I
C = –2 mA*
2
Collector to emitter
saturation voltage
V
CE(sat)
—
–0.05 –0.15 —
–0.05 –0.15 V
I
C = –10 mA,
I
B = –1 mA*
2
Base to emitter
saturation voltage
V
BE(sat)
—
–0.7
–1.0
—
–0.7
–1.0
V
Gain bandwidth product f
T
—
130
—
130
—
MHz
V
CE = –6 V,
I
C = –10 mA
Collector output
capacitance
Cob
—
3.2
—
3.2
—
pF
V
CB = –10 V, IE = 0,
f = 1 MHz
Notes: 1. The 2SA1188 and 2SA1189 are grouped by h
FE as follows.
2. Pulse test
DE
250 to 500
400 to 800
See characteristic curves of 2SA1190 and 2SA1191.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1189-D | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1189 | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1190-E | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1191-E | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1190DTZ-E | 100 mA, 90 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1190 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial |
| 2SA1190D | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT PNP 90V 0.1A 3-Pin TO-92 |
| 2SA1190DTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA1190E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1190ETZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
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