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參數(shù)資料
| 型號(hào)： | 2SA1179N |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CPA, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 35K |
| 代理商： | 2SA1179N |
2SA1179N / 2SC2812N
No.7198-1/4
Features
Miniature package facilitates miniaturization in end products.
High breakdown voltage.
Specifications ( ) : 2SA1179N
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)55
V
Collector-to-Emitter Voltage
VCEO
(--)50
V
Emitter-to-Base Voltage
VEBO
(--)5
V
Collector Current
IC
(--)150
mA
Collector Current (Pulse)
ICP
(--)300
mA
Base Current
IB
(--)30
mA
Collector Dissipation
PC
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)35V, IE=0A
(--)0.1
A
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)0.1
A
DC Current Gain
hFE
VCE=(--)6V, IC=(--)1mA
200
400
Gain-Bandwidth Product
fT
2SC2812N : VCE=6V, IC=1mA
100
MHz
2SA1179N : VCE=--6V, IC=--10mA
(180)
MHz
Output Capacitance
Cob
VCB=(--)6V, f=1MHz
(4.0)3.0
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)50mA, IB=(--)5mA
(--0.15)0.1
(--)0.5
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)50mA, IB=(--)5mA
(--)1.0
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10A, IE=0A
(--)55
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10A, IC=0A
(--)5
V
Marking : 2SA1179N : M / 2SC2812N : L
* : The 2SA1179N / 2SC2812N are classified by 1mA hFE as follws:
Rank
6
hFE
200 to 400
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN7198A
92006 MS IM TC-00000143,00000144 / 72602 TS IM TA-2636, 2637
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
2SA1179N / 2SC2812N
PNP / NPN Epitaxial Planar Silicon Transistors
Low-Frequency General-Purpose
Amp Applications
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC2812N | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1188 | 100 mA, 90 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1189-D | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1189-D | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1188-E | SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1179N_06 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Low-Frequency General-Purpose Amp Applications |
| 2SA1179N_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Low-Frequency General-Purpose Amp Applications |
| 2SA1179N6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SA1179N6-CPA-TB-E | 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 BIP PNP 0.15A 50V RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| 2SA1179N6-TB-E | 功能描述:兩極晶體管 - BJT BIP PNP 0.15A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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