參數(shù)資料
型號: 2SA1122
廠商: Hitachi,Ltd.
英文描述: Silicon PNP Epitaxial
中文描述: 硅外延進步黨
文件頁數(shù): 2/5頁
文件大?。?/td> 24K
代理商: 2SA1122
2SA1122
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
–55
V
Collector to emitter voltage
–55
V
Emitter to base voltage
–5
V
Collector current
–100
mA
Collector power dissipation
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–55
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–55
V
I
C
= –1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
–5
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
–0.5
μ
A
μ
A
V
CB
= –30 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V, I
C
= –2 mA
I
C
= –10 mA, I
B
= –1 mA
Emitter cutoff current
–0.5
DC current transfer ratio
160
800
Collector to emitter saturation
voltage
–0.5
V
Base to emitter voltage
Note:
1. The 2SA1122 is grouped by h
FE
as follows.
Grade
B
V
BE
–0.75
V
V
CE
= –12 V, I
C
= –2 mA
C
D
Mark
CC
CD
CE
h
FE
160 to 320
250 to 500
400 to 800
See characteristic curves of 2SA836.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA1122B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT
2SA1122C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 100MA I(C) | SOT-346
2SA1122CCTL-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial
2SA1122CD 制造商:Renesas Electronics Corporation 功能描述:
2SA1122CDTL-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial