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參數(shù)資料
| 型號(hào)： | 2SA1104 |
| 廠商： | 永盛國(guó)際集團(tuán) |
| 英文描述： | Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION) |
| 中文描述： | 硅外延平面晶體管（一般）的說明 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 79K |
| 代理商： | 2SA1104 |
GENERAL DESCRIPTION
Silicon PNP high frequency, high power transistors
in a plastic envelope, primarily for use in audio and
general purpose
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0V
TYP
-
-
-
-
-
-
1.5
MAX
120
120
8
UNIT
V
V
A
A
W
V
V
T
mb
I
C
= 3.5A; I
B
= 0.35A
I
F
= 3.5A
25
80
2
2.0
-
s
SYMBOL
V
CESM
V
CEO
V
EBO
I
C
I
B
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0V
MIN
-
-
MAX
120
120
5
8
2
80
150
150
UNIT
V
V
V
A
A
W
-
-
-
Tmb
25
-55
-
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
f
T
C
c
t
on
t
s
t
f
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
V
CB
=100V
V
EB
=5V
I
C
=1mA
I
C
= 3.5A; I
B
= 0.35A
I
C
= 3A; V
CE
= 5V
I
C
= 1A; V
CE
= 12V
V
CB
= 10V
TYP
-
-
120
-
50
20
300
MAX
0.2
0.2
UNIT
mA
mA
V
V
2
250
-
-
MHz
pF
us
us
us
ELECTRICAL CHARACTERISTICS
MT-100
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
2SA1104
Silicon Epitaxial Planar Transistor
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1105 | PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
| 2SA1106 | PNP PLANAR TRANSISTOR(AUDIO POWER AMPLIFIER, DC TO DC CONVERTER) |
| 2SA1121 | Silicon PNP Epitaxial |
| 2SA1122 | Silicon PNP Epitaxial |
| 2SA1129 | PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1105 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
| 2SA1106 | 制造商:JMNIC 制造商全稱:Quanzhou Jinmei Electronic Co.,Ltd. 功能描述:Silicon PNP Power Transistors |
| 2SA1106S-Y | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1107 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SA1108 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
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