參數(shù)資料
型號: 2SA1036KT146/P
元件分類: 小信號晶體管
英文描述: 500 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: SMT3, SC-59, 3 PIN
文件頁數(shù): 2/4頁
文件大小: 74K
代理商: 2SA1036KT146/P
2SA1036K
Transistors
Rev.A
2/3
Electrical characteristics (Ta=25
°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
40
32
5
82
200
1
390
0.6
V
IC=
100A
IC=
1mA
IE=
100A
VCB=
20V
VEB=
4V
VCE=
3V, IC= 100mA
IC/IB=
300mA/30mA
VCE=
5V, IE=20mA, f=100MHz
VCB=
10V, IE=0A, f=1MHz
V
V
MHz
7
pF
Typ.
Max.
Unit
Conditions
A
Packaging specifications
Package
Code
Taping
Basic ordering unit (pieces)
hFE
T146
3000
PQR
2SA1036K
Type
hFE values are classifies as follows.
Item
P
Q
R
hFE
82 to 180
120 to 270
180 to 390
Electrical characteristic curves
-0.2
0
-500
-200
-100
-50
-20
-10
-5
-2
-1
-0.5
-0.2
-0.1
-0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2
VCE=-3V
COLLECTOR
CURRENT
:
I
C
(
mA)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propogation
Ta=100 C
25 C
-55 C
-1
-40
-80
-3
0
-20
-60
-100
0-2
-4
-5
-200
-400
-10
-5
0
-100
-300
-500
0
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Ta=25 C
Fig.3 Ground emitter output
characteristics (
ΙΙ )
IB=0A
-0.5mA
-1.0mA
-1.5mA
-2.0mA
-2.5mA
-3.0mA
-3.5mA
-4.0mA
-4.5mA
-5.0mA
Ta=25 C
COLLECTOR
CURRENT
:
I
C
(
mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics (
Ι )
IB=0A
-0.1mA
-0.2mA
-0.3mA
-0.4mA
-0.5mA
-0.6mA
-0.7mA
-0.8mA
-0.9mA
-1mA
相關(guān)PDF資料
PDF描述
2SA1036KT146P 500 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1037AKT146/RS 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1774TL/RS 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1576AT106QR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1576AT106QS 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA1036KT146Q 功能描述:兩極晶體管 - BJT PNP 32V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SA1036KT146Q/R 制造商:ROHM Semiconductor 功能描述:Transistor, PNP, Driver, -32V, -500mA,
2SA1036KT146R 功能描述:兩極晶體管 - BJT PNP 32V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SA1036KXLT1 制造商:WILLAS 制造商全稱:WILLAS 功能描述:Medium Power Transistor
2SA1036-P 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP Silicon Epitaxial Transistors