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參數(shù)資料
| 型號(hào)： | 2SA1029CTZ |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | SC-43A, TO-92(1), 3 PIN |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 181K |
| 代理商： | 2SA1029CTZ |
2SA1029, 2SA1030
Rev.3.00 Aug 10, 2005 page 3 of 5
Main Characteristics
0
–1
–2
–3
–4
–5
–0.2
–0.4
Collector Emitter Voltage VCE (V)
Collector
Current
I
C
(mA)
Typical Output Characteristics (1)
–0.6
–0.8
–1.0
IB = 0
–5
A
–10
–15
–20
–25
0
–1
–2
–3
–4
–5
–10
Collector Emitter Voltage VCE (V)
Collector
Current
I
C
(mA)
Typical Output Characteristics (2)
–15
–20
–25
IB = 0
–5
A
–10
–15
–20
0
–1
–2
–3
–4
–5
–0.2
–0.4
Base to Emitter Voltage VBE (V)
Collector
Current
I
C
(mA)
Typical Transfer Characteristics
–0.6
–0.8
–1.0
VCE = –12 V
Ta
=
75
°C
25
0
100
200
300
400
500
–0.1
–0.01
–1.0
Collector Current IC (mA)
DC
Current
Transfer
Ratio
h
FE
DC Current Transfer Ratio vs.
Collector Current
–10
–100
VCE = –12 V
0
100
200
300
400
500
–1.0
–0.5
–2
Collector Current IC (mA)
Gain
Bandwidth
Product
f
T
(MHz)
Gain Bandwidth Product vs.
Collector Current
–5
–10
–20
VCE = –12 V
0
100
200
300
50
Ambient Temperature Ta (°C)
Collector
Power
Dissipation
P
C
(mW)
Maximum Collector Dissipation Curve
100
150
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1029D | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1029DTZ | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA103 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Ge PNP Drift |
| 2SA1030 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANS. TO-92-55V -.1A .2W ECB |
| 2SA1030B | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | TO-92 |
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