- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄30475 > 2SA1022C (PANASONIC CORP) 30 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 PDF資料下載
參數(shù)資料
| 型號： | 2SA1022C |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 238K |
| 代理商： | 2SA1022C |
Transistors
1
Publication date: February 2003
SJC00009BED
2SA1022
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC2295
■ Features
High frequency voltage f
T
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
30
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Base-emitter voltage
VBE
VCE
= 10 V, I
C
= 1 mA
0.7
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 0
0.1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 20 V, IB = 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 5 V, I
C
= 0
10
A
Forward current transfer ratio *
hFE
VCE = 10 V, IC = 1 mA
70
220
Collector-emitter saturation voltage
VCE(sat)
IC = 10 mA, IB = 1 mA
0.1
V
Transition frequency
fT
VCB
= 10 V, I
E
= 1 mA, f = 200 MHz
150
300
MHz
Noise figure
NF
VCB = 10 V, IE = 1 mA, f = 5 MHz
2.8
dB
Reverse transfer impedance
Zrb
VCB = 10 V, IE = 1 mA, f = 2 MHz
22
Reverse transfer capacitance
Cre
VCE
= 10 V, I
C
= 1 mA, f = 10.7 MHz
1.2
pF
(Common emitter)
■ Electrical Characteristics T
a
= 25°C ± 3°C
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5
10
0
to
0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
Rank
B
C
hFE
70 to 140
110 to 220
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: E
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1029-D | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1029-C | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1030-C | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1029 | 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1030C | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1025 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-92 -60V -.1A .4W ECB |
| 2SA1025D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1025E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1029 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial |
| 2SA1029B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。