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參數(shù)資料
| 型號： | 2SA1020-Y-T9N-R |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | SILICON PNP EPITAXIAL TRANSISTOR |
| 中文描述： | 進步黨硅外延晶體管 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 207K |
| 代理商： | 2SA1020-Y-T9N-R |
2SA1020
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R211-007,B
T Y PICAL CHARACT ERIS T ICS (Cont.)
TO-92NL
SOT-89
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1020L-O-AB3-K | SILICON PNP EPITAXIAL TRANSISTOR |
| 2SA1020L-O-AB3-R | SILICON PNP EPITAXIAL TRANSISTOR |
| 2SA1020L-O-T9N-B | SILICON PNP EPITAXIAL TRANSISTOR |
| 2SA1020L-O-T9N-K | SILICON PNP EPITAXIAL TRANSISTOR |
| 2SA1020L-O-T9N-R | SILICON PNP EPITAXIAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1020-YTE6CM | 制造商:Toshiba America Electronic Components 功能描述:TRANS GP BJT PNP 50V 2A 3PIN TO-92 MOD - Tape and Reel |
| 2SA1020-YTE6FM | 制造商:Toshiba America Electronic Components 功能描述:POWER TRANSISTOR |
| 2SA1021 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
| 2SA1022 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATS. TRANS. SC-59-30V -.03A .2WSURFACE MOUNT 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA10220BL | 功能描述:TRANS PNP 20VCEO 30MA MINI-3P RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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