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參數(shù)資料
| 型號(hào)： | 2SA0921R |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 20 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92-B1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 200K |
| 代理商： | 2SA0921R |
Transistors
1
Publication date: January 2003
SJC00007BED
2SA0921 (2SA921)
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SC1980
■ Features
High collector-emitter voltage (Base open) V
CEO
Low noise voltage NV
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
120
V
Collector-emitter voltage (Base open)
VCEO
120
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
20
mA
Peak collector current
ICP
50
mA
Collector power dissipation
PC
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 A, I
E
= 0
120
V
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 0
120
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 0
5V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 50 V, I
E
= 0
100
nA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
1
A
Forward current transfer ratio *
hFE
VCE = 5 V, IC = 2 mA
180
700
Collector-emitter saturation voltage
VCE(sat)
IC
= 20 mA, I
B
= 2 mA
0.6
V
Transition frequency
fT
VCB = 5 V, IE = 2 mA, f = 200 MHz
200
MHz
Noise voltage
NV
VCE = 40 V, IC = 1 mA, GV = 80 dB
150
mV
Rg = 100 k, Function = FLAT
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
12 3
+0.6
–0.2
4.0±0.2
5.1
±
0.2
12.9
±
0.5
2.3
±
0.2
0.7
±
0.2
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Note) The part number in the parenthesis shows conventional part number.
Rank
R
S
T
hFE
180 to 360
260 to 520
360 to 700
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA0921S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | TO-92 |
| 2SA0963 | 功能描述:TRANS PNP HF 40VCEO 1.5A TO-126 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SA0963(2SA963) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:パワーデバイス － パワートランジスタ － その他 |
| 2SA0963Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-126 |
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