參數(shù)資料
型號： 2PD601AW
廠商： NXP Semiconductors N.V.
英文描述： NPN general purpose transistor
中文描述： NPN通用型晶體管
文件頁數(shù)： 3/8頁
文件大小： 48K
代理商： 2PD601AW
2002 Jun 26
3
Philips Semiconductors
Preliminary specification
NPN general purpose transistor
2PD601AW
THERMAL CHARACTERISTICS
Note
1.
For mounting conditions, see “Thermal considerations and footprint design for SOT323 in the General Part of Data
Handbook SC18”.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector-base cut-off current
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 100 mA; V
CE
= 2 V; note 1
I
C
= 2 mA; V
CE
= 10 V
90
10
5
10
nA
μ
A
nA
I
EBO
h
FE
emitter-base cut-off current
DC current gain
DC current gain
2PD601AQW
2PD601ARW
2PD601ASW
collector-emitter saturation voltage
collector capacitance
transition frequency
2PD601AQW
2PD601ARW
2PD601ASW
160
210
290
260
340
460
500
3.5
V
CEsat
C
c
f
T
I
C
= 100 mA; I
B
= 10 mA; note 1
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 2 mA; V
CE
= 10 V;
f = 100 MHz
mV
pF
100
120
140
MHz
MHz
MHz
相關PDF資料
PDF描述
2PD601A NPN general purpose transistor(NPN通用型晶體管)
2PD601AQ Paper Capacitor; Voltage Rating:1500VDC; Capacitor Dielectric Material:Paper; Capacitance:10uF; Capacitance Tolerance: 10%; Lead Pitch:20.64mm; Leaded Process Compatible:No; Package/Case:D; Peak Reflow Compatible (260 C):No RoHS Compliant: No
2PD601AR Paper Capacitor; Voltage Rating:1500VDC; Capacitor Dielectric Material:Paper; Capacitance:12uF; Capacitance Tolerance: 10%; Lead Pitch:20.64mm; Leaded Process Compatible:No; Package/Case:D; Peak Reflow Compatible (260 C):No RoHS Compliant: No
2PD601AS Paper Capacitor; Voltage Rating:1500VDC; Capacitor Dielectric Material:Paper; Capacitance:15uF; Capacitance Tolerance:+/- 10%; Lead Pitch:20.64mm; Leaded Process Compatible:No; Package/Case:D; Peak Reflow Compatible (260 C):No RoHS Compliant: No
2PD601 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-236VAR
相關代理商/技術參數(shù)
參數(shù)描述
2PD601BRL 制造商:NXP Semiconductors 功能描述:TRANSISTORNPN50V0.2ASOT23 制造商:NXP Semiconductors 功能描述:TRANSISTOR,NPN,50V,0.2A,SOT23 制造商:NXP Semiconductors 功能描述:TRANSISTOR,NPN,50V,0.2A,SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:250mW; DC Collector Current:200mA; DC Current Gain hFE:210; No. of Pins:3 ;RoHS Compliant: Yes
2PD601BRL,215 功能描述:兩極晶體管 - BJT NPN 50 V 200 mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2PD601BSL 制造商:NXP Semiconductors 功能描述:TRANSISTORNPN50V0.2ASOT23 制造商:NXP Semiconductors 功能描述:TRANSISTOR,NPN,50V,0.2A,SOT23 制造商:NXP Semiconductors 功能描述:TRANSISTOR,NPN,50V,0.2A,SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:250mW; DC Collector Current:200mA; DC Current Gain hFE:290; No. of Pins:3 ;RoHS Compliant: Yes
2PD601BSL,215 功能描述:兩極晶體管 - BJT NPN 50 V 200 mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2PD602 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | SOT-23VAR
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