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參數(shù)資料
| 型號(hào)： | 2N7381 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | JFETs |
| 英文描述： | 9.4 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 封裝： | TO-257AA, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 149K |
| 代理商： | 2N7381 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED N-CHANNEL MOSFET
Reference MIL-PRF-19500/614
T4-LDS-0124 Rev. 1 (091145)
Page 1 of 4
DEVICES
LEVELS
2N7381
JANSM (3K RAD(Si))
JANSD (10K RAD(Si))
JANSR (100K RAD(Si))
JANSF (300K RAD(Si))
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Drain – Source Voltage
VDS
200
Vdc
Gate – Source Voltage
VGS
± 20
Vdc
Continuous Drain Current
TC = +25°C
ID1
9.4
Adc
Continuous Drain Current
TC = +100°C
ID2
6.0
Adc
Max. Power Dissipation
Ptl
75 (1)
W
Drain to Source On State Resistance
Rds(on)
0.40 (2)
Ω
Operating & Storage Temperature
Top, Tstg
-55 to +150
°C
Note: (1) Derated Linearly by 0.6 W/°C for TC > +25°C
(2) VGS = 12Vdc, ID = 6.0A
PRE-IRRADIATION ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise
noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc
V(BR)DSS
200
Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 1.0mA
VDS ≥ VGS, ID = 1.0mA, Tj = +125°C
VDS ≥ VGS, ID = 1.0mA, Tj = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
Vdc
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
IGSS1
IGSS2
±100
±200
nAdc
Drain Current
VGS = 0V, VDS = 160V
VGS = 0V, VDS = 160V, Tj = +125°C
IDSS1
IDSS2
25
0.25
Adc
mAdc
Static Drain-Source On-State Resistance
VGS = 12V, ID = 6.0A pulsed
VGS = 12V, ID = 9.4A pulsed
Tj = +125°C
VGS = 12V, ID = 6.0A pulsed
rDS(on)1
rDS(on)2
rDS(on)3
0..40
0.49
0.75
Ω
Diode Forward Voltage
VGS = 0V, ID = 9.4A pulsed
VSD
1.4
Vdc
TO-257AA
JANSR2N7381, JANSF2N7381
See Figure 1
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