- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄371472 > 2N7373 (MICROSEMI CORP-LAWRENCE) Complimentary Power Transistors in Hermetic Isolated TO-254AA Packages PDF資料下載
參數(shù)資料
| 型號(hào)： | 2N7373 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Complimentary Power Transistors in Hermetic Isolated TO-254AA Packages |
| 中文描述： | 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-254AA |
| 封裝： | TO-254AA, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 56K |
| 代理商： | 2N7373 |
MSC1343.PDF 010-29-99
2N7372 - PNP
2N7373 - NPN
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Continuous Collector Current
I
C
Peak Collector Current
I
B
Continuous Base Current
T
STG
Storage Temperature
T
J
Operating Junction Temperature
Lead Temperature 1/16" from cast for 10 sec.
Unclamped Inductive Load Energy
P
T
Continuous Device
Dissipation T
C
= 25
°
C
T
C
= 100
°
C
θ
JC
Thermal Resistance Junction to Case
CHARACTERISTIC
2N7372
- 100
- 80
- 5.5
5
10
2
2N7373
100
80
5.5
5
10
2
UNITS
V
V
V
A
A
A
°
C
-65 to 200
-65 to 200
300
15
°
C
°
C
mj
58
58
W
33
33
W
3
3
°
C/W
Complimentary
Power Transistors
in Hermetic Isolated
TO-254AA Packages
JAN/TX/TXV/JANS
FEATURES:
Planar Process for Reliability
Fast Switching
High-Frequency Power Transistors
For Complementary Use with Each Other
15 mj Reverse Energy Rating with I
C
= 10MA and 4 V Reverse Bias
Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Package
Leads can be Formed
All Terminals Isolated from the Case
TO-254AA
APPLICATIONS:
Power Supply
Inverters and Converters
General Purpose Amplifiers
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
DESCRIPTION:
These power transistors are produced by PPC's MULTIPLE DIFFUSED
PLANAR process. This technology produces high voltage devices with
excellent switching speeds, frequency response, gain linearity, saturation
voltages, high current gain, and safe operating areas. These devices have
excellent unclamped and clamped reverse energy ratings with the base to
emitter reversed biased.
Ultrasonically bonded wire leads and gold eutectic die bonding are utilized to
permit operating temperature to 200
°
C. The hermetically sealed package
insures maximum reliability and long life. The isolated low profile package
allows for easy PC board fit.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2NH45 | FAST RECOVERY RECTIFIER (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
| 2NU41 | SUPER FAST RECOVERY RECTIFIER (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
| 2PB710A | PNP general purpose transistor |
| 2PB710AQ | PNP general purpose transistor |
| 2PB710AR | PNP general purpose transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7373_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN POWER SILICON SWITCHING TRANSISTOR |
| 2N7374 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 200V 5A 3PIN TO-257 - Bulk |
| 2N7375 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 5A 3PIN TO-257 - Bulk |
| 2N7376 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 200V 5A 3PIN TO-254 - Bulk |
| 2N7377 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 5A 3PIN TO-254 - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。