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參數(shù)資料
| 型號： | 2N7002KW |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 156K |
| 代理商： | 2N7002KW |
PAGE . 1
May 21.2010-REV.01
2N7002KW
FEATURES
R
DS(ON), VGS@10V,IDS@500mA=3Ω
R
DS(ON), VGS@4.5V,IDS@200mA=4Ω
Advanced Trench Process Technology
High Density Cell Design For Ultra Low On-Resistance
Very Low Leakage Current In Off Condition
Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
ESD Protected 2KV HBM
In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
Case: SOT-323 Package
Terminals : Solderable per MIL-STD-750,Method 2026
Marking : K72
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Maximum RATINGS and Thermal Characteristics (T
A=25
OC unless otherwise noted )
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
3
1
G
Top
View
S
D
2
PA RA M E TE R
S ym bol
Li m i t
Uni t s
D r a i n- S o ur c e Vo lt a g e
V
DS
60
V
Ga t e -S o urc e Vo lta g e
V
GS
+ 20
V
C o nt i nuo us D r a i n C ur r e nt
I
D
11 5
m A
P uls e d D r a i n C urre nt 1)
I
DM
800
m A
Ma xi mum P o we r D i s s i p a t i o n
T
A =2 5
O C
T
A =7 5
O C
P
D
200
120
mW
Oper a t i ng J unc t i on and S t or age
Te m per at ur e Ra ng e
T
J ,T STG
- 55 t o + 150
O C
Junction-to Ambient Thermal
Resistance(PCB mounted)2
R
θJA
625
O C/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002KW _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| 2N7002KW_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| 2N7002KW_10 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:60V N-Channel Enhancement Mode MOSFET - ESD Protected |
| 2N7002KW-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-323 T/R |
| 2N7002L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 |
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