參數(shù)資料
型號: 2N7002K-7
廠商: DIODES INC
元件分類: 小信號晶體管
英文描述: N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
中文描述: 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: GREEN, PLASTIC PACKAGE-3
文件頁數(shù): 3/4頁
文件大?。?/td> 136K
代理商: 2N7002K-7
DS30896 Rev. 2 - 2
3 of 4
2N7002K
www.diodes.com
1
I , DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
10
0.1
1
0.001
0.01
0.1
V
Pulsed
= 5V
GS
T = 150 C
°
T = 125 C
°
T = 85 C
°
T = -55 C
°
T = 25 C
°
T = -25 C
°
T = 0 C
°
0
V
GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
GS,
1
2
3
4
5
6
7
0
2
4
6
8
10
12
14
16
18
20
I = 300mA
I = 150mA
T = 25 C
Pulsed
°
N
I
,
D
0.001
0.01
0.1
1
0
0.5
1
1.5
V
,
Fig. 8 Reverse Drain Current
vs. Source-Drain Voltage
SD
SOURCE-DRAIN VOLTAGE (V)
V
Pulsed
= 0V
GS
T
= -55 C
A
°
T
= 150 C
A
°
T
= 125 C
A
°
T
= 85 C
A
°
T = 25 C
°
T = 0 C
°
T = -25 C
°
0
Tch, CHANNEL TEMPERATURE ( C)
Fig. 7
Static Drain-Source On-State Resistance
vs. Channel Temperature
°
0.5
1
1.5
2
2.5
-75
-50
-25
0
25
50
75
100 125 150
V
Pulsed
= 10V
GS
I = 300mA
I = 150mA
1
I , DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance
vs. Drain Current
|
f
0.001
0.01
0.1
0.001
0.01
0.1
1
V
Pulsed
= 10V
GS
T = 25 C
°
T =
-55 C
°
T =
150 C
°
T =
85 C
°
1
0.001
0.01
0.1
1
0
0.5
I
,
D
V
,
Fig. 9 Reverse Drain Current
vs. Source-Drain Voltage
SD
SOURCE-DRAIN VOLTAGE (V)
V
= 0V
GS
V
= 10V
GS
T = 25°C
Pulsed
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