參數(shù)資料
型號(hào)： 2N7002E-13
廠商： DIODES INC
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 240 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 72K
代理商： 2N7002E-13
DS30376 Rev. 4 - 2
1 of 3
2N7002E
www.diodes.com
Diodes Incorporated
2N7002E
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
Low On-Resistance: RDS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Available in Lead Free/RoHS Compliant Version
(Note 2)
Maximum Ratings
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage RGS
1.0MW
VDGR
60
V
Gate-Source Voltage
Continuous
Pulsed
VGSS
±20
±40
V
Drain Current
Continuous
ID
240
mA
Total Power Dissipation (Note 1)
Pd
300
mW
Thermal Resistance, Junction to Ambient
RqJA
417
°C/W
Operating and Storage Temperature Range
Tj,TSTG
-55 to +150
°C
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
Case: SOT-23
Case Material: UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin
Finish annealed over Alloy 42 leadframe). Please see
Ordering Information, Note 5, on Page 2
Terminal Connections: See Diagram
Marking (See Page 2): K7B
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
Mechanical Data
A
E
J
L
TOP VIEW
M
B C
H
G
D
K
D
G
S
T
C
U
D
O
R
P
W
E
N
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0
°
8
°
All Dimensions in mm
SPICE MODEL: 2N7002E
相關(guān)PDF資料
PDF描述
2N7002E-T1-GE3 240 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
2N7002FT/R 475 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
2N7002G-AL6-R 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002G-AL3-R 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002KTB 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N7002E215 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 385MA 3-SOT-23
2N7002-E3 功能描述:MOSFET 60V 0.115A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7002-E3 制造商:Vishay Siliconix 功能描述:MOSFET
2N7002E-7 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7002E-7-F 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*