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參數(shù)資料
| 型號(hào)： | 2N7002/E8 |
| 廠商： | GENERAL SEMICONDUCTOR INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 230 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 104K |
| 代理商： | 2N7002/E8 |
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source-Voltage
VGS
±20
V
Continuous Drain Current
TA = 25°C
ID
230
mA
TJ = 150°C
TA = 70°C
180
Pulsed Drain Current(1)
IDM
1300
mA
Maximum Power Dissipation
TA = 25°C
300
TA = 70°C
PD
192
mW
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to +150
°C
Maximum Junction-to-Ambient Thermal Resistance
R
θJA
417
°C/W
Note:
(1) Pulse test, pulse width
≤ 300s, duty cycle ≤ 2%
2N7002
N-Channel Enhancement-Mode MOSFET
VDS 60V RDS(ON) 3.0
ID 230mA
3/8/01
Features
Advanced Trench Process Technology
High density cell design for ultra-low on-resistance
High input impedance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No secondary breakdown
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code: S72
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
TRENCH
GEN
FET
TM
.016 (0.4)
.056
(
1
.43
)
.037(0.95) .037(0.95)
ma
x
..004
(
0.1
)
.122 (3.1)
.016 (0.4)
1
2
3
Top View
.102 (2.6)
.007
(
0
.17
5)
.0
45
(
1
.15)
.110 (2.8)
.052
(
1
.33
)
.005
(
0
.1
25)
.094 (2.4)
.0
37
(
0
.95)
TO-236AB (SOT-23)
Dimensions in inches and (millimeters)
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
Pin Configuration
1. Gate
2. Source
3. Drain
Mounting Pad Layout
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002E8/10K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 115MA I(D) | TO-236AB |
| 2N7002E9/3K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 115MA I(D) | TO-236AB |
| 2N7002E-E3 | 制造商:Vishay Siliconix 功能描述:SS MOS LEAD FREE - Bulk |
| 2N7002ELT1 | 制造商:WILLAS 制造商全稱:WILLAS 功能描述:310 mAmps, 60 Volts |
| 2N7002EPT | 制造商:CHENMKO 制造商全稱:Chenmko Enterprise Co. Ltd. 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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