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參數(shù)資料
| 型號： | 2N7000/E7 |
| 廠商： | GENERAL SEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA |
| 封裝： | PLASTIC, TO-92, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 259K |
| 代理商： | 2N7000/E7 |
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage
VDGS
60
V
Gate-Source-Voltage (pulsed)
VGS
±20
V
Drain Current (continuous)
ID
300
mA
Peak Drain Current (pulsed)
IDM
1.3
A
Power Dissipation at Tamb = 25°CPtot
830(1)
mW
Thermal Resistance Junction to Ambient Air
RθJA
150(1)
°C/W
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +150
°C
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.
2N7000
DMOS Transistor (N-Channel)
11/12/01
Features
High input impedance
Low gate threshold voltage
Low drain-source ON-resistance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Packaging Codes/Options:
E7/4K per Ammo tape, 20K/box
TO-226AA (TO-92)
0.181 (4.6)
m
in
.0.492
(12.5
)
0.1
81
(4
.6)
0.142 (3.6)
0.098 (2.5)
max.
0.022 (0.55)
Bottom
View
Dimensions in inches
and (millimeters)
相關PDF資料 |
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| 2N7000-TR1 | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA |
| 2N7000 | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA |
| 2N7000-TA | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA |
| 2N7000CSM-JQR-B | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N7000CSM-JQR-BG4 | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7000G | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000-G | 功能描述:MOSFET 60V 5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000-G P002 | 制造商:Supertex Inc 功能描述:N-Channel MOSFET |
| 2N7000-G P003 | 制造商:Supertex Inc 功能描述:N-Channel MOSFET |
| 2N7000-G P005 | 制造商:Supertex Inc 功能描述:N-Channel MOSFET |
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