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參數(shù)資料
| 型號(hào)： | 2N6989UJANTX |
| 廠商： | Microsemi Corporation |
| 英文描述： | MULTIPLE NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR |
| 中文描述： | 多重NPN硅雙列和扁平開(kāi)關(guān)晶體管 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 53K |
| 代理商： | 2N6989UJANTX |
Data S heet No. 2N6989
OFF Characteristics
Collector-Base Breakdown Voltage
I
C
= 10 μA
Collector-Emitter Breakdown Voltage
I
C
= 10 mA, pulsed
Emitter-Base Breakdown Voltage
I
E
= 10 μA
Collector-Emitter Cutoff Current
V
CE
= 50 V
Collector-Base Cutoff Current
V
CB
= 60 V
Emitter-Base Cutoff Current
V
EB
= 4 V
Symbol
Min
Typ
Max
Unit
I
CBO1
---
10
2.0
I
EBO
---
10
0.5
I
CES
---
50
3.0
V
(BR)EBO
6.0
---
7.0
---
120
V
(BR)CEO
50
---
65
nA
nA
V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
V
nA
V
(BR)CBO
75
ON Characteristics
DC Current Gain
I
C
= 100 μA, V
CE
= 10 V
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V (pulse test)
I
C
= 500 mA, V
CE
= 10 V (pulse test)
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA (pulse test)
I
C
= 500 mA, I
B
= 50 mA (pulse test)
Base-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA (pulse test)
I
C
= 500 mA, I
B
= 50 mA (pulse test)
Symbol
Min
Typ
Max
Unit
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
50
75
100
100
30
180
200
200
200
75
---
325
---
300
---
---
---
---
---
---
V
CE(sat)1
V
CE(sat)2
---
---
0.1
0.3
0.3
1.0
V dc
V dc
V
BE(sat)1
V
BE(sat)2
0.6
---
0.85
1.0
1.2
2.0
V dc
V dc
Small Signal Characteristics
Short Circuit Forward Current Transfer Ratio
I
C
= 1 mA, V
CE
= 10 V, f = 1kHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0 V, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1 MHz
Symbol
Min
Typ
Max
Unit
pF
AC h
FE
50
240
---
C
IBO
---
17.5
25
---
pF
C
OBO
---
4.5
8
Switching Characteristics
Saturated Turn On Switching Time to 90%
16V, 50 ohm input pulse
Saturated Turn Off Switching Time to 10%
16V, 50 ohm input pulse
Symbol
Min
Typ
Max
Unit
ns
t
OFF
---
175
300
ns
t
ON
---
14
35
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