參數(shù)資料
型號: 2N6796
廠商: MICROSEMI CORP-LAWRENCE
元件分類: JFETs
英文描述: 8 A, 100 V, 0.195 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
封裝: FORMELY TO-39, 3 PIN
文件頁數(shù): 2/4頁
文件大小: 177K
代理商: 2N6796
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0047 Rev. 2 (101281)
Page 2 of 4
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Gate Charge:
Qg(on)
Qgs
Qgd
nC
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 10V, ID = 8.0A
VDS = 50V
28.51
6.34
16.59
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
ID = 8.0A, VGS = 10Vdc,
Gate drive impedance = 7.5
Ω,
VDD = 30Vdc
td(on)
tr
td(off)
tf
30
75
40
45
ns
Diode Reverse Recovery Time
di/dt ≤ 100A/s, VDD ≤ 50V,
IF = 8.0A
trr
300
ns
相關(guān)PDF資料
PDF描述
2N6798 5.5 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N6798 5.5 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N6798TXV 5.5 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N6799 3 A, 350 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N6800 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6796 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-39
2N6796_03 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:TMOS FET ENHANCEMENT N - CHANNEL
2N6796_10 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL MOSFET
2N6796JANTX 制造商:International Rectifier 功能描述: 制造商:Microsemi Corporation 功能描述:
2N6796JANTXV 制造商:International Rectifier 功能描述: